TPCC8103

2010-01-14

1

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ)

TPCC8103

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to a small and thin package

• Low drain-source ON-resistance:

Characteristic

Symbol

Rating

Unit

Drain-source voltage

−30

V

−30

V

Gate-source voltage

±20

V

DC

(Note 1)

−18

Drain current

Pulsed (Note 1)

−54

A

Drain power dissipation (Tc = 25°C)

27

W

Drain power dissipation

(t

= 10 s)

(Note 2a)

1.9

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

0.7

W

Single-pulse avalanche energy

(Note 3)

84

mJ

Avalanche current

−18

A

Repetitive avalanche energy

(Tc = 25°C) (Note 4)

1.59

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-3X1A

Weight: 0.02 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4

1,2,3:SOURCE 4:GATE

5,6,7,8:DRAIN