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BTA201W-800E 数据表(PDF) 6 Page - NXP Semiconductors

部件名 BTA201W-800E
功能描述  1 A Three-quadrant triacs high commutation
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

BTA201W-800E 数据表(HTML) 6 Page - NXP Semiconductors

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BTA201W_SER_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 13 March 2008
6 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
6.
Static characteristics
Table 5.
Static characteristics
Tj =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
BTA201W-600E and BTA201W-800E
IGT
gate trigger current
VD =12V; IT = 0.1 A; see Figure 8
T2+ G+
1
-
10
mA
T2+ G
1
-
10
mA
T2
− G−
1
-
10
mA
IL
latching current
VD =12V; IG = 0.1 A; see Figure 10
T2+ G+
-
-
12
mA
T2+ G
-
-
20
mA
T2
− G−
-
-
12
mA
IH
holding current
VD =12V; IG = 0.1 A; see Figure 11
-
-
12
mA
VT
on-state voltage
IT = 1.4 A; see Figure 9
-
1.2
1.5
V
VGT
gate trigger voltage
VD =12V; IT = 0.1 A; see Figure 7
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C
0.2
0.3
-
V
ID
off-state current
VD =VDRM(max); Tj = 125 °C
-
0.1
0.5
mA


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