BC848 datasheet(3/12 Pages) NXP

部件名	BC848

功能描述	30 V, 100 mA NPN general-purpose transistors

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制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

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3 / 12 page

BC848_SER_7

Product data sheet

Rev. 07 — 17 November 2009

3 of 12

NXP Semiconductors

BC848 series

30 V, 100 mA NPN general-purpose transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

30

V

VCEO

collector-emitter voltage

open base

-

30

V

VEBO

emitter-base voltage

open collector

-

5

V

IC

collector current

-

100

mA

ICM

peak collector current

single pulse;

tp ≤ 1ms

-200

mA

IBM

peak base current

single pulse;

tp ≤ 1ms

-200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

SOT23

-

250

mW

SOT323

-

200

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

SOT23

-

500

K/W

SOT323

-

625

K/W

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