数据搜索系统,热门电子元器件搜索 |
|
BC807DS 数据表(PDF) 3 Page - NXP Semiconductors |
|
BC807DS 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2002 Nov 22 3 NXP Semiconductors Product data sheet PNP general purpose double transistor BC807DS THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Notes 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2. VBE decreases by approximately −2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 208 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ICBO collector-base cut-off current VCB = −20 V; IE = 0 − − −100 nA VCB = −20 V; IE = 0; Tj = 150 °C − − −5 μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA hFE DC current gain VCE = −1 V; IC = −100 mA; note 1 160 − 400 VCE = −1 V; IC = −500 mA; note 1 40 − − VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1 − − −700 mV VBE base-emitter voltage VCE = −1 V; IC = −500 mA; notes 1 and 2 − − −1.2 V Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − 9 − pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 80 − − MHz |
类似零件编号 - BC807DS |
|
类似说明 - BC807DS |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |