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BC807DS 数据表(PDF) 3 Page - NXP Semiconductors

部件名 BC807DS
功能描述  PNP general purpose double transistor
Download  7 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

BC807DS 数据表(HTML) 3 Page - NXP Semiconductors

  BC807DS Datasheet HTML 1Page - NXP Semiconductors BC807DS Datasheet HTML 2Page - NXP Semiconductors BC807DS Datasheet HTML 3Page - NXP Semiconductors BC807DS Datasheet HTML 4Page - NXP Semiconductors BC807DS Datasheet HTML 5Page - NXP Semiconductors BC807DS Datasheet HTML 6Page - NXP Semiconductors BC807DS Datasheet HTML 7Page - NXP Semiconductors  
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2002 Nov 22
3
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC807DS
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Notes
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2.
VBE decreases by approximately −2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
208
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
ICBO
collector-base cut-off current
VCB = −20 V; IE = 0
−100
nA
VCB = −20 V; IE = 0; Tj = 150 °C
−5
μA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−100
nA
hFE
DC current gain
VCE = −1 V; IC = −100 mA; note 1
160
400
VCE = −1 V; IC = −500 mA; note 1
40
VCEsat
collector-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1
−700
mV
VBE
base-emitter voltage
VCE = −1 V; IC = −500 mA;
notes 1 and 2
−1.2
V
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
9
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
80
MHz


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