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BAS16W 数据表(PDF) 2 Page - NXP Semiconductors |
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BAS16W 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 20 page BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 2 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 1.4 Quick reference data [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. 2. Pinning information [1] The marking bar indicates the cathode. Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode VR reverse voltage - - 100 V IR reverse current VR = 80 V - - 0.5 µA trr reverse recovery time [1] --4 ns Table 3. Pinning Pin Description Simplified outline Graphic symbol BAS16; BAS16T; BAS16W 1 anode 2 not connected 3 cathode BAS16H; BAS16J; BAS316; BAS516 1 cathode [1] 2 anode BAS16L 1 cathode [1] 2 anode BAS16VV; BAS16VY 1 anode (diode 1) 2 anode (diode 2) 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 6 cathode (diode 1) 006aaa144 12 3 006aaa764 3 12 001aab540 12 006aab040 2 1 2 1 Transparent top view 006aab040 2 1 001aab555 6 4 5 1 3 2 006aab106 13 6 2 54 |
类似零件编号 - BAS16W |
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类似说明 - BAS16W |
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