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74LVC1G58GF 数据表(PDF) 7 Page - NXP Semiconductors

部件名 74LVC1G58GF
功能描述  Low-power configurable multiple function gate
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

74LVC1G58GF 数据表(HTML) 7 Page - NXP Semiconductors

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74LVC1G58_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 April 2009
7 of 18
NXP Semiconductors
74LVC1G58
Low-power configurable multiple function gate
[1]
Typical values are measured at maximum VCC and Tamb =25 °C.
11. Dynamic characteristics
[1]
Typical values are measured at nominal VCC and at Tamb =25 °C.
[2]
tpd is the same as tPLH and tPHL
[3]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(C
L × VCC
2
× f
o) = sum of outputs.
IOFF
power-off leakage current VI or VO = 5.5 V; VCC = 0 V
-
-
±200
µA
ICC
supply current
VI = 5.5 V or GND;
VCC = 1.65 V to 5.5 V; IO =0A
-
-
200
µA
∆ICC
additional supply current
VI =VCC − 0.6 V; IO =0A;
VCC = 2.3 V to 5.5 V
-
-
5000
µA
Table 8.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 9.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
tpd
propagation delay
A, B, C to Y; see Figure 12
[2]
VCC = 1.65 V to 1.95 V
1.0
6.0
14.4
1.0
18.0
ns
VCC = 2.3 V to 2.7 V
0.5
3.5
8.3
0.5
10.4
ns
VCC = 2.7 V
0.5
4.2
8.5
0.5
10.6
ns
VCC = 3.0 V to 3.6 V
0.5
3.8
6.3
0.5
7.9
ns
VCC = 4.5 V to 5.5 V
0.5
3.0
5.1
0.5
6.4
ns
CPD
power dissipation
capacitance
VCC = 3.3 V; VI = GND to VCC
[3]
-20-
-
-
pF


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