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74AUP1G885DC 数据表(PDF) 8 Page - NXP Semiconductors

部件名 74AUP1G885DC
功能描述  Low-power dual function gate
Download  19 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

74AUP1G885DC 数据表(HTML) 8 Page - NXP Semiconductors

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74AUP1G885_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 26 June 2009
8 of 19
NXP Semiconductors
74AUP1G885
Low-power dual function gate
[1]
One input at VCC − 0.6 V, other inputs at VCC or GND.
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.11
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.33
× V
CC
V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.41
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.39
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.36
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.50
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.36
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.50
V
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.75
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.75
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
--
±0.75
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
1.4
µA
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
[1] --
75
µA
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit


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