74AUP1G38GW datasheet(7/15 Pages) NXP

部件名	74AUP1G38GW

功能描述	Low-power 2-input NAND gate (open drain)

Download	15 Pages

Scroll/Zoom	100%

制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

标志

7 / 15 page

74AUP1G38_3

Product data sheet

Rev. 03 — 22 June 2009

7 of 15

NXP Semiconductors

74AUP1G38

Low-power 2-input NAND gate (open drain)

11. Dynamic characteristics

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground=0V; for test circuit see Figure 8

Symbol Parameter

Conditions

25

°C

−40 °C to +125 °C

Unit

Min

Typ[1]

Max

Min

Max

(85

°C)

Max

(125

°C)

CL = 5 pF

tpd

propagation delay

A or B to Y; see Figure 7

[2]

VCC = 0.8 V

-

13.5

-

ns

VCC = 1.1 V to 1.3 V

1.9

4.6

10.4

1.8

11.4

12.6

ns

VCC = 1.4 V to 1.6 V

1.5

3.3

6.5

1.4

7.4

8.2

ns

VCC = 1.65 V to 1.95 V

1.2

2.9

5.1

1.1

5.9

6.5

ns

VCC = 2.3 V to 2.7 V

1.0

2.2

3.8

0.9

4.5

4.9

ns

VCC = 3.0 V to 3.6 V

0.9

2.3

4.0

0.8

4.5

4.9

ns

CL = 10 pF

tpd

propagation delay

A or B to Y; see Figure 7

[2]

VCC = 0.8 V

-

16.3

-

ns

VCC = 1.1 V to 1.3 V

2.3

5.6

12.3

2.1

13.7

15.1

ns

VCC = 1.4 V to 1.6 V

1.8

4.1

7.6

1.7

8.8

9.7

ns

VCC = 1.65 V to 1.95 V

1.6

3.8

6.1

1.4

7.1

7.8

ns

VCC = 2.3 V to 2.7 V

1.4

2.9

4.6

1.2

5.4

5.9

ns

VCC = 3.0 V to 3.6 V

1.3

3.2

5.7

1.1

6.4

7.0

ns

CL = 15 pF

tpd

propagation delay

A or B to Y; see Figure 7

[2]

VCC = 0.8 V

-

19.0

-

ns

VCC = 1.1 V to 1.3 V

2.6

6.6

14.2

2.4

15.8

17.4

ns

VCC = 1.4 V to 1.6 V

2.1

4.8

8.7

1.9

10.1

11.1

ns

VCC = 1.65 V to 1.95 V

1.9

4.6

7.6

1.7

8.5

9.3

ns

VCC = 2.3 V to 2.7 V

1.6

3.6

5.6

1.5

6.3

6.9

ns

VCC = 3.0 V to 3.6 V

1.6

4.1

7.5

1.4

8.3

9.1

ns

CL = 30 pF

tpd

propagation delay

A or B to Y; see Figure 7

[2]

VCC = 0.8 V

-

27.0

-

ns

VCC = 1.1 V to 1.3 V

3.6

9.5

19.5

3.2

21.8

24.0

ns

VCC = 1.4 V to 1.6 V

2.9

7.0

11.5

2.6

13.6

15.0

ns

VCC = 1.65 V to 1.95 V

2.6

7.0

12.1

2.3

13.3

14.6

ns

VCC = 2.3 V to 2.7 V

2.4

5.4

8.9

2.1

9.9

10.9

ns

VCC = 3.0 V to 3.6 V

2.3

6.5

12.7

2.1

13.9

15.3

ns

类似零件编号 - 74AUP1G38GW

制造商	部件名	数据表	功能描述
Nexperia B.V. All right...	74AUP1G38GW	269Kb / 18P	Low-power 2-input NAND gate (open drain) Rev. 9 - 16 August 2022

More results

类似说明 - 74AUP1G38GW

制造商	部件名	数据表	功能描述
Nexperia B.V. All right...	74AUP1G38	269Kb / 18P	Low-power 2-input NAND gate (open drain) Rev. 9 - 16 August 2022
NXP Semiconductors	74LVC1G38	84Kb / 15P	2-input NAND gate; open drain Rev. 03-27 August 2007
	74AUP2G38	86Kb / 16P	Low-power dual 2-input NAND gate (open-drain) Rev. 01-16 October 2006
	74AUP2G38	501Kb / 17P	Low-power dual 2-input NAND gate; open drain Rev. 04-8 October 2009
Nexperia B.V. All right...	74AUP2G38	252Kb / 17P	Low-power dual 2-input NAND gate; open drain Rev. 10 - 3 December 2020
	74LVC1G38-Q100	783Kb / 13P	2-input NAND gate; open drain
	74LVC1G38	261Kb / 17P	2-input NAND gate; open drain Rev. 10 - 12 January 2022
STMicroelectronics	74VHC03	54Kb / 7P	QUAD 2-INPUT OPEN DRAIN NAND GATE June 1999
Toshiba Semiconductor	TC74HC03AP	208Kb / 7P	Quad 2-Input NAND Gate (open drain)
Toshiba Semiconductor	TC7SZ38F	188Kb / 7P	2-Input NAND Gate(Open Drain Output)