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1PS88SB82 数据表(PDF) 4 Page - NXP Semiconductors |
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1PS88SB82 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 10 page 1PS66SB82_1PS88SB82_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 13 January 2010 4 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Reverse current as a function of reverse voltage; typical values f = 1 kHz; Tamb = 25 °Cf = 1 MHz; Tamb = 25 °C Fig 3. Differential diode forward resistance as a function of forward current; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values 1.6 0 (3) 0.4 0.8 1.2 VF (V) IF (mA) 103 102 10 1 mld549 (1) (2) (1) (2) (3) 15 10 VR (V) IR ( μA) 5 0 (3) mld550 103 102 10 1 10−1 10−2 (1) (2) 103 10 102 1 mgt838 10−1 1 rdif ( Ω) 10 IF (mA) 102 010 1.2 0 0.4 0.6 0.8 1 2 Cd (pF) VR (V) 46 8 mld551 |
类似零件编号 - 1PS88SB82 |
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类似说明 - 1PS88SB82 |
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