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BCX5616 数据表(PDF) 1 Page - Zetex Semiconductors |
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BCX5616 数据表(HTML) 1 Page - Zetex Semiconductors |
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1 / 1 page SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 – MARCH 2001 COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 2A Continuous Collector Current IC 1A Power Dissipation at Tamb=25°C Ptot 1W Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown voltage V(BR)CBO 100 V IC =100 µA Collector-Emitter Breakdown Voltage V(BR)CEO 80 V IC =10mA Emitter-Base Breakdown Voltage V(BR)EBO 5V IE =10µA Collector Cut-Off Current ICBO 0.1 20 µA µA VCB =30V VCB =30V, Tamb =150°C Emitter Cut-Off Current IEBO 20 nA VEB =4V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC =500mA, IB =50mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC =500mA, VCE =2V* Static Forward Current Transfer Ratio hFE 25 100 25 250 IC =5mA, VCE =2V* IC =150mA, VCE =2V* IC =500mA, VCE =2V* Transition Frequency fT 150 MHz IC =50mA, VCE =10V, f=100MHz Output Capacitance Cobo 15 pF VCB =10V, f=1MHz *Measured under pulsed conditions. BCX5616 C C B E SOT89 TBA |
类似零件编号 - BCX5616 |
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类似说明 - BCX5616 |
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