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SS8027GT41TB 数据表(PDF) 2 Page - Silicon Standard Corp. |
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SS8027GT41TB 数据表(HTML) 2 Page - Silicon Standard Corp. |
2 / 10 page www.SiliconStandard.com 2 of 10 5/26/2005 Rev.2.2 SS8027G Absolute Maximum Ratings (Note 1) Input Voltage……………………….……………...................................................................……..……10V Power Dissipation Internally Limited . (Note 2) Maximum Junction Temperature.…..……………...............................................................………...150°C Storage Temperature Range….……....................................................................................…...-65°C ≤ T J ≤+150°C Lead Temperature, Time for Wave Soldering TO 220, TO 263 Package…………….........................................................................…..………..260°C, 10s TO 252, SOT 223 Package………………….........................................................................………260°C, 4s Continuous Power Dissipation (TA = +25°C) SOT 223 (1) ……………………..................................................................………….………………....0.8W TO 252 (1) ……………………………..................................................................….………………..….1.0W TO 263 (1) ……………………………..................................................................….………………..….1.6W TO 220 (1) ………………………….………..................................................................……………..….2.0W Note (1): See Recommended Minimum Footprint Operating Conditions (Note 1) Input Voltage……………………………….....................................................................…………….4V~7V Temperature Range………….…….........................................................................................……-40°C ≤ T J ≤125°C Electrical Characteristics VIN =5V, IO = 1A, CIN = 1µF, COUT =10µF, All specifications apply for TA = TJ = 25°C. [Note 3] PARAMETER CONDITIONS MIN TYP MAX UNITS Output Voltage 50mA < IO <1A 3.234 3.3 3.366 V Line Regulation 4V < VIN < 7V, IO = 10mA 20 30 mV Load Regulation 50mA < IO < 1A 30 50 mV Output Impedance 200mA DC and 100mA AC, fo = 120Hz 100 m Ω Quiescent Current VIN = 5V 0.6 mA Ripple Rejection fi = 120Hz, 1VP-P, Io = 100mA 42 dB IO = 1A 0.8 V Dropout Voltage IO = 100mA 200 mV Short Circuit Current 1.6 1.9 A Over Temperature 125 °C Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Con- ditions are conditions under which the device functions but the specifications might not be guaranteed. For guaranteed specifications and test conditions see the Electrical Characteristics. Note 2: The maximum power dissipation is a function of the maximum junction temperature, TJmax , total thermal resistance, θ JA, and ambient temperature TA. The maximum allowable power dissipation at any ambient temperature is Tjmax-TA / θ JA. If this dissipation is exceeded, the die temperature will rise above 150°C and IC will go into thermal shutdown. For the SS8027G in the SOT-223 package, θ JA is 156°C/W; in the TO-252 package, θ JA is 125°C/W; in the TO-263 package, θ JA is 75°C/W, and in the TO-220 package, θ JA is 60°C/W (no heat sink). [See Recommended Minimum Footprint] If the TO-220 package is used with a heat sink, θ JA is the sum of the package thermal resistance junction-to-case ( θ JC) of 3°C/W and the thermal resistance added by the heat sink and thermal interface.The thermal resistance can be reduced by increasing the P.C. board copper area thermally connected to the package. The safe op- eration area of SOT-223, TO-252, TO-263 or TO-220 packages can be seen in “Typical Performance Characteristics” (Safe Operating Area). Note3: Low duty-cycle pulse techniques are used during test to maintain the junction temperature as close to ambient temperature as possible. Note4: The output capacitor should be a tantalum or aluminum type. |
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类似说明 - SS8027GT41TB |
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