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SS8026T45TR 数据表(PDF) 2 Page - Silicon Standard Corp. |
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SS8026T45TR 数据表(HTML) 2 Page - Silicon Standard Corp. |
2 / 12 page www.SiliconStandard.com 2 of 12 Rev.2.02 12/06/2003 SS8026 Absolute Maximum Ratings (Note 1) Input Voltage………………...................................................................……………………..…..…7V Power Dissipation Internally Limited….................................................................... (Note 2) Maximum Junction Temperature….......................................................……………............…..150°C Storage Temperature Rang…........................................................................................-65°C ≤ T J ≤+150°C Lead Temperature, Time for Wave Soldering SOT 223 Package……………….…….......................................................................………..260°C, 4s Continuous Power Dissipation (TA = +25°C) SOT 89 (1) ……………………......................................................................………………..….…0.5W SOT 223 (1) ……………...................................................................………...……………….…....0.8W TO 252 (1) ……………………….................................................................................................................………………………………………………….1.0W Note (1): See Recommended Minimum Footprint Operating Conditions (Note 1) Input Voltage……………………........................................................................……………..2.7V~6.5V Temperature Range…………..........................................................................................…0°C ≤ T J ≤125°C Electrical Characteristics VIN =3.3V, IO = 1A, CIN = 1µF, COUT =10µF, All specifications apply for TA = TJ = 25°C. [Note 3] PARAMETER CONDITIONS MIN TYP MAX UNITS Output Voltage 10mA < IO < 1A 1.764 1.800 1.845 V Line Regulation 3V < VIN < 6.5V, IO = 10mA 3 30 mV Load Regulation 10mA < IO < 1A 30 50 mV Output Impedance 200mA DC and 100mA AC, fo = 120Hz 80 m Ω Quiescent Current VIN = 3.3V 480 µA Ripple Rejection fi = 120Hz,Vripple =1VP-P, Io = 100mA 53 dB IO = 0A 880 IO = 100mA 895 IO = 500mA 950 Dropout Voltage IO = 1A 1160 mV VIN = 3V(SOT 223) Minimum footprint (0.0625 square inch) 660 mA VIN = 3.3V(SOT 223) Mounted on 0.53 square inch pcb area 1 A Output Current Continuous Test, TA = 25°C, TJ 150°C, VOUT within ±2% VIN = 3.3V(SOT 89) Mounted on 0.16 square inch pcb area 0.5 A Short Circuit Current 1.6 A Over Temperature 150 °C Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions are conditions under which the device functions but the specifications might not be guaranteed. For guaran- teed specifications and test conditions see the Electrical Characteristics. Note 2: The maximum power dissipation is a function of the maximum junction temperature, TJmax , total thermal re- sistance, θ JA, and ambient temperature TA. The maximum allowable power dissipation at any ambient te m- perature is Tjmax-TA / θJA. If this dissipation is exceeded, tthe die temperature will rise above 150°C and the IC will go into thermal shutdown. For the SS8026 in SOT 89 package, θ JA is 250°C/W. For the SS8026 in SOT 223 package, θ JA is 156°C/W; in TO 252 package, θJA is 125°C/W. (See recommend minimum footprint). The safe operation in SOT 89, SOT 223, TO 252 package, can be seen in “Typical Performance Characteristics” (Safe Operating Area). Note3: Low duty pulse techniques are used during test to maintain junction temperatures as close to ambient as possible. Note4: The output capacitor should be a tantalum or aluminum type. |
类似零件编号 - SS8026T45TR |
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类似说明 - SS8026T45TR |
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