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SS6642-37GUTR 数据表(PDF) 5 Page - Silicon Standard Corp. |
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SS6642-37GUTR 数据表(HTML) 5 Page - Silicon Standard Corp. |
5 / 22 page www.SiliconStandard.com 5 of 22 SS6642G 1/15/2005 Rev.2.10 ELECTRICAL CHARACTERISTICS (Continued) PARAMETER TEST CONDITIONS TEST CKT SYMBOL MIN. TYP. MAX. UNIT SW Switch-On Resis- tance SS6642-27G SS6642-30G SS6642-33G SS6642-37G SS6642-45G SS6642-50G VS=VOUT x 0.95, VSW=0.4V 2 RON 2.2 2.1 2.0 2.0 1.9 1.9 Ω Oscillator Duty Cycle VS=VOUT x 0.95 Measurement of the SW pin waveform 3 DUTY 65 75 85 % Max. Oscillator Freq. VS=VOUT x 0.95 Measurement of the SW pin waveform 3 FOSC 80 105 130 KHz Efficiency 1 η 85 % Note 1: Specifications are production tested at TA=25°C. Specifications over the -40°C to 85°C operating temperature range are assured by design, characterization and correlation with Statistical Quality Controls (SQC). TYPICAL PERFORMANCE CHARACTERISTICS Test circuit refer to typical application circuit Capacitor (C2) : 47 µ F (Tantalum Type) Diode (D1) : 1N5819 Schottky Type Fig. 4 SS6642-27 Load Regulation (L=100 µH CD54) 0 20 40 60 80 100 120 140 160 180 2.2 2.3 2.4 2.5 2.6 2.7 2.8 VIN=2.0V VIN=1.8V VIN=1.5V VIN=1.2V VIN=0.9V Output Current (mA) Fig. 5 SS6642-27 Efficiency (L=100 µH CD54) 0 20 40 60 80 100 120 140 160 180 55 60 65 70 75 80 85 VIN=2.0V VIN=1.8V VIN=1.5V VIN=1.2V VIN=0.9V Output current (mA) |
类似零件编号 - SS6642-37GUTR |
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类似说明 - SS6642-37GUTR |
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