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ES1B-T1 数据表(PDF) 1 Page - Won-Top Electronics |
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ES1B-T1 数据表(HTML) 1 Page - Won-Top Electronics |
1 / 3 page ES1A – ES1J 1 of 3 © 2002 Won-Top Electronics ES1A – ES1J 1.0A SURFACE MOUNT SUPER FAST RECTIFIER Features ! Glass Passivated Die Construction ! Ideally Suited for Automatic Assembly B ! Low Forward Voltage Drop, High Efficiency ! Surge Overload Rating to 30A Peak D ! Low Power Loss A ! Super-Fast Recovery Time F ! Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E Mechanical Data ! Case: Low Profile Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.064 grams (approx.) Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Characteristic Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RMS Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 V Average Rectified Output Current @TL = 120°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 0.95 1.25 1.7 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 5.0 500 µA Reverse Recovery Time (Note 1) trr 35 nS Typical Junction Capacitance (Note 2) Cj 10 pF Typical Thermal Resistance (Note 3) RJL 35 K/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A, 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. WTE POWER SEMICONDUCTORS SMA/DO-214AC Dim Min Max A 2.50 2.90 B 4.00 4.60 C 1.40 1.60 D 0.152 0.305 E 4.80 5.28 F 2.00 2.44 G 0.051 0.203 H 0.76 1.52 All Dimensions in mm |
类似零件编号 - ES1B-T1 |
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类似说明 - ES1B-T1 |
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