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BCW66G 数据表(PDF) 1 Page - Rectron Semiconductor |
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BCW66G 数据表(HTML) 1 Page - Rectron Semiconductor |
1 / 2 page RECTRON SEMICONDUCTOR FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 BCW66G Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. Single phase , half wave, 60HZ, resistive or inductive load. For capacitive load, derate current by 20%. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted ) CHARACTERISTICS SYMBOL UNITS V V V Marking EG 0.055(1.40) 0.047(1.20) BASE EMITTER COLLECTOR 1 1 2 3 2 3 DC current gain (VCE= 10V, IC= 0.1mA) DC current gain (VCE= 1V, IC= 10mA) DC current gain (VCE= 1V, IC= 100mA) DC current gain (VCE= 2V, IC= 500mA) Collector cut-off current (VCB= 45V, IE=0) Collector cut-off current (VEB= 4V, IC=0) Transition frequency (VCE= 10V, IC= 20mA, f=100MHZ) Collector base capacitance (VCB= 10V, IE= 0, f=1MHZ) Emitter base capacitance (VEB= 0.5V, IE= 0, f=1MHZ) Collector-emitter saturation voltage (IC= 100mA, IB= 10mA) Collector-emitter saturation voltage (IC= 500mA, IB= 50mA) Base-emitter saturation voltage (IC= 100mA, IB= 10mA) Base-emitter saturation voltage (IC= 500mA, IB= 50mA) Noise figure (VCE= 5V, IE= 0.2mA, f=1kHz, Df=200Hz, RG=2KW) - 0.3 0.7 - - - - MHz 2 - 12 m A m A V V V pF pF V dB Collector-base breakdown voltage (IC= 10mA, IE=0) Collector-emitter breakdown voltage (IC= 10mA, IB=0) Emitter-base breakdown voltage (IE= 10mA, IC=0) V(BR)CBO V(BR)CEO V(BR)EBO IEBO hFE ICBO VCE(sat) VBE(sat) fT CEB CCB NF MAX 60 - - - - 10 - 0.02 - - 0.02 - - 400 - - 100 MIN - 1.25 80 - - - - - TYP - - - - - - - - - - - - 75 45 5 - 110 50 - 160 * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)". |
类似零件编号 - BCW66G |
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类似说明 - BCW66G |
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