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TPR400A 数据表(PDF) 1 Page - Microsemi Corporation |
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TPR400A 数据表(HTML) 1 Page - Microsemi Corporation |
1 / 4 page GENERAL DESCRIPTION The TPR400A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low thermal resistance packaging reduces the junction temperature and extends device lifetime. CASE OUTLINE 55CX, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 875 Watts Maximum Voltage and Current BVces Collector to Base Voltage 55 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current 30 Amps Maximum Temperatures Storage Temperature - 65 to + 150oC Operating Junction Temperature + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg ηc VSWR Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 1030 &1090 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% 400 9.5 50 45 5:1 Watts Watts dB % BVebo BVces hFE θjc1 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 20 mA Ic = 25 mA Ic = 2.5 A, Vce = 5 V 4.0 55 10 100 .2 Volts Volts oC/W Note 1: At rated output power and pulse conditions Rev B – November 2009 TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz |
类似零件编号 - TPR400A |
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类似说明 - TPR400A |
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