ES6U3

Data Sheet

4/4

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c

2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.A

< Di >

Measurement circuit

Fig.1-1 Switching Time Measurement Circuit

D.U.T.

Fig.1-2 Switching Waveforms

90%

90%

90%

10%

10%

10%

50%

50%

Pulse Width

tf

Fig.2-1 Gate Charge Measurement Circuit

D.U.T.

FIg.2-2 Gate Charge Waveform

Charge

Notice

1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and

increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.

temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD

protection circuit.

0.01

0.1

1

10

100

1000

10000

100000

0

5

10

15

20

25

pulsed

Ta= - 25℃

Ta = 25℃

Ta = 75℃

0.001

0.01

0.1

1

0

0.1

0.2

0.3

0.4

0.5

0.6

pulsed

Ta= - 25℃

Ta = 25℃

Ta = 75℃

Fig.1 Reverse Current vs. Reverse Voltage

Fig.2 Forward Current vs. Forward Voltage