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2SD1760 数据表(PDF) 1 Page - Rohm |
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2SD1760 数据表(HTML) 1 Page - Rohm |
1 / 4 page 1/3 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) (1) Base (2) Collector (3) Emitter (1) Emitter (2) Collector (3) Base ROHM : CPT3 EIAJ : SC-63 ROHM : ATV 6.8 ±0.2 2.5 ±0.2 1.05 0.45 ±0.1 2.54 2.54 0.5 ±0.1 (1) (2) (3) 0.65Max. 2SD1760 2SD1864 −0.1 +0.2 −0.1 +0.2 2.3 ±0.2 2.3 ±0.2 0.65 ±0.1 0.9 0.75 1.0 ±0.2 0.55 ±0.1 2.3 0.5 ±0.1 6.5 ±0.2 5.1 C0.5 (3) (2) (1) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit VCBO 60 V VCEO 50 V VEBO 5V IC 3 A (DC) 4.5 A (Pulse) ∗ 1 Tj 150 °C Tstg −55 to +150 °C 2SD1864 2SD1760 1 15 W (Tc =25°C)∗ 2 PC ∗1 Single pulse, PW=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. W Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation Electrical characteristics (Ta=25 C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) fT Cob Min. 60 50 5 − − 120 390 − − − − − − − − − 0.5 90 40 − − − 1 1 1 − − VIC =50μA IC =1mA IE =50μA VCB =40V VEB =4V VCE =3V, IC=0.5A VCE =5V, IE=−500mA, f=30MHz IC/IB =2A/0.2A ∗ ∗ ∗ VCB =10V, IE=0A, f=1MHz V V μA μA − V MHz pF Typ. Max. Unit Conditions ∗ Measured using pulse current. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Transition frequency |
类似零件编号 - 2SD1760_09 |
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类似说明 - 2SD1760_09 |
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