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1N4756A 数据表(PDF) 1 Page - Transys Electronics |
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1N4756A 数据表(HTML) 1 Page - Transys Electronics |
1 / 5 page 1N4741A THRU 1M200Z GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt FEATURES l Low profile package l Built-in strain relief l Glass passivated junction l Low inductance l Typical IR less than 5.0 A above 11V l High temperature soldering : 260 /10 seconds at terminals l Plastic package has Underwriters Laboratory Flammability Classification 94V-O MECHANICAL DATA Case: Molded plastic, DO-41 Epoxy: UL 94V-O rate flame retardant Lead: Axial leads, solderable per MIL-STD-202, method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.012 ounce, 0.3 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. SYMBOL VALUE UNITS Peak Pulse Power Dissipation on TA=50 (Note A) Derate above 50 PD 1.0 6.67 Watts mW/ Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated load(JEDEC Method) (Note B) IFSM 10 Amps Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 NOTES: A. Mounted on 5.0mm 2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. DO-41 |
类似零件编号 - 1N4756A |
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类似说明 - 1N4756A |
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