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TLP283-4 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TLP283-4 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page TLP283,TLP283-4 2002-09-04 2 MAXIMUM RATINGS (Ta = 25℃ ℃ ℃ ℃) RATING CHARACTERISTIC SYMBOL TLP283 TLP283−4 UNIT Forward Current IF 50 mA Forward Current Derating ∆IF /°C −0.7 (Ta≥53°C) −0.5 (Ta≥25°C) mA /°C Pulse Forward Current IFP 1 A Reverse Voltage VR 5 V Junction Temperature Tj 125 °C Collector-Emitter Voltage VCEO 100 V Emitter-Collector Voltage VECO 7 V Collector Current IC 50 mA Collector Power Dissipation (1 Circuit) PC 150 100 mW Collector Power Dissipation Derating(Ta≥25°C) (1 Circuit) ∆PC /°C −1.5 −1.0 mW /°C Junction Temperature Tj 125 °C Operating Temperature Range Topr −55~100 °C Storage Temperature Range Tstg −55~125 °C Lead Soldering Temperature Tsol 260 (10s) °C Total Package Power Dissipation (1 Circuit) PT 200 170 mW Total Package Power Dissipation Derating (Ta≥25°C) (1 Circuit) ∆PT /°C −2.0 −1.7 mW /°C Isolation Voltage (Note2) BVS 2500(AC,1min,R.H.≤60%) Vrms (Note2)Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted together. INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25℃ ℃ ℃ ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V — — 10 µA Capacitance CT V = 0, f = 1 MHz — 30 — pF Collector-Emitter Breakdown Voltage V(BR) CEO IC = 0.5 mA 100 — — V Emitter-Collector Breakdown Voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 48 V, Ambient Light Below (100 ℓx) — 0.01 (2) 0.1 (10) µA Collector Dark Current (Note3) ICEO VCE = 48 V, Ta = 85°C Ambient Light Below (100 ℓx) — 2 (4) 50 (50) µA Capacitance (Collector to Emitter) CCE V = 0, f = 1 MHz — 10 — pF (Note3) Because of the construction,leak current might be increased by ambient light. Please use photocoupler with less ambient light. |
类似零件编号 - TLP283-4 |
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类似说明 - TLP283-4 |
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