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TLP113 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TLP113 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 8 page TLP113 2002-09-25 2 Maximum Ratings(Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 20 mA Pulse forward current (Note 1) IFP 40 mA Peak transient forward current (Note 2) IFPT 1 A Reverse voltage VR 5 V Output current IO 25 mA Output voltage VO 7 V Supply voltage (1 minute maximum) VCC 7 V Output power dissipation PO 40 mW Operating temperature range Topr -40~85 °C Storage temperature range Tstg -55~125 °C Lead solder temperature (10s) Tsol 260 °C Isolation voltage (AC, 1 min., RH ≤ 60%, Note 4) BVS 2500 Vrms (Note 1) 50% duty cycle, 1ms pulse width. (Note 2) Pulse width≤1µs, 300pps. Recommende Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input voltage, low level VFL -3 0 1.0 V Input current, high level IFH 13* 16 20 mA Supply voltage VCC 4.5 5 5.5 V Fan out (TTL load, each channel) N ― ― 8 ― Operating temperature Topr 0 ― 70 °C * 13mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 10mA or less. |
类似零件编号 - TLP113 |
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类似说明 - TLP113 |
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