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CDBER0230R-HF 数据表(PDF) 1 Page - Comchip Technology

部件名 CDBER0230R-HF
功能描述  SMD Schottky Barrier Diode
Download  4 Pages
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制造商  COMCHIP [Comchip Technology]
网页  http://www.comchiptech.com
标志 COMCHIP - Comchip Technology

CDBER0230R-HF 数据表(HTML) 1 Page - Comchip Technology

  CDBER0230R-HF Datasheet HTML 1Page - Comchip Technology CDBER0230R-HF Datasheet HTML 2Page - Comchip Technology CDBER0230R-HF Datasheet HTML 3Page - Comchip Technology CDBER0230R-HF Datasheet HTML 4Page - Comchip Technology  
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Io = 200 mA
VR = 30 Volts
CDBER0230R-HF
SMD Schottky Barrier Diode
Page 1
REV:A
SMD Diodes Specialist
A
mA
V
V
1
200
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol Min Typ Max Unit
uA
V
1
0.6
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol Min Typ Max Unit
VR = 10 V
IF = 200 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Features
Halogen free.
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0503(1308) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BB
Mounting position: Any.
Weight: 0.002 gram(approx.).
0.053(1.35)
0.045(1.15)
0.034(0.85)
0.026(0.65)
0.030(0.75)
0.024(0.60)
Dimensions in inches and (millimeter)
0503(1308)
0.022(0.55) Typ.
0.016(0.40) Typ.
Comchip Technology CO., LTD.
(RoHS Device)
mW
150
PD
Power Dissipation
QW-G1056


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