BDX62 datasheet(2/5 Pages) COMSET

部件名	BDX62

功能描述	PNP SILICON DARLINGTONS

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制造商	COMSET [Comset Semiconductor]

网页	http://comset.halfin.com

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THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance, Junction to Case

BDX62

BDX62A

BDX62B

BDX62C

1.94

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

BDX62

-60

-

BDX62A

-80

-

BDX62B

-100

-

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=-0.1 A, IB=0, L=25mH

BDX62C

-120

-

V

VCE=-30 V

BDX62

-

VCE=-40 V

BDX62A

-

VCE=-50 V

BDX62B

-

ICEO

Collector Cutoff Current

VCE=-60 V

BDX62C

-

-0.5

mA

类似零件编号 - BDX62

制造商	部件名	数据表	功能描述
Seme LAB	BDX62	16Kb / 1P	Bipolar PNP Device in a Hermetically sealed TO3
Inchange Semiconductor ...	BDX62	91Kb / 2P	isc Silicon PNP Darlington Power Transistor
Comset Semiconductor	BDX62	83Kb / 4P	PNP SILICON DARLINGTON POWER TRANSISTOR
New Jersey Semi-Conduct...	BDX62	143Kb / 2P	Silicon PNP Darlington Power Transistor
Seme LAB	BDX62A	14Kb / 1P	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

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