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CDBB5100-G 数据表(PDF) 1 Page - Comchip Technology |
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CDBB5100-G 数据表(HTML) 1 Page - Comchip Technology |
1 / 4 page Reverse Voltage: 40,60,100 Volts Forward Current: 5.0 Amp RoHS Device Dimensions in inches and (millimeter) CDBB540-G Thru. CDBB5100-G Page 1 QW-BB028 SMD Schottky Barrier Rectifiers REV:A Comchip Technology CO., LTD. SMB-1 SMD Diodes Specialist 0.213(5.4) 0.197(5.0) 0.016(0.4) Typ. 0.142(3.6) 0.126(3.2) 0.168(4.2) 0.150(3.8) 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. 0.040(1.0) Typ. Unit CDBB560-G 60 42 60 150 0.5 50 12 380 Parameter Symbol CDBB540-G CDBB5100-G 100 70 100 28 40 40 Repetitive peak reverse voltage Maximum RMS voltage Continuous reverse voltage Maximum forward voltage @IF=1.0A Forward rectified current VRRM VRMS VR VF IO 0.75 0.55 0.85 5.0 Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Typ. thermal resistance, junction to ambient air Typ. diode junction capacitance (Note 1) Operating junction temperature Storage temperature IFSM IR RθJA CJ TJ TSTG Reverse current on VR=VRRM @TA=25°C @TA=125°C Note 1: f=1MHz and applied 4V DC reverse voltage. -55 to +125 -55 to +150 -65 to +175 V V V V A A mA pF °C °C °C/W Maximum Ratings(at TA=25°C unless otherwise noted) Features Mechanical data Molded plastic, JEDEC SMB. -Weight:0.09 gram(approx.). -Batch process design, excellent powe dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage dorp. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 -Case: -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any |
类似零件编号 - CDBB5100-G |
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类似说明 - CDBB5100-G |
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