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SI-8011NVS 数据表(PDF) 2 Page - Sanken electric

部件名 SI-8011NVS
功能描述  Surface-Mount Synchronous Rectifier Step-down Switching Mode Regulator Control ICs
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制造商  SANKEN [Sanken electric]
网页  http://www.sanken-ele.co.jp/en
标志 SANKEN - Sanken electric

SI-8011NVS 数据表(HTML) 2 Page - Sanken electric

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79
ICs
SI-8011NVS
■External Dimensions (TSSOP24)
Plastic Mold Package Type
Flammability: UL94V-0
Product Mass: Approx. 1.36g
(Unit : mm)
Depth 0.02 to 0.08
13
12
24
1
0.4
0.50
±0.2
3.00
7.9
±0.2
7.80
±0.1
0.375 TYP
0.65
A
2.0 Mirror surface
φ
Depth 0.02 to 0.08
1.0 Mirror surface
φ
0.22+0.1
–0.05
0.15
+0.1
–0.05
0.12
A
M
0.08 S
S
11°
11°
11°
11°
■Block Diagram (Pin Assignment)
VIN
ILIM
VIN
FADJ
FSET
SS
SKIP
Open : Skip Mode
L
: No Skip Mode
VCC2
VCC1
+5V
VO
VO
ISEN
VH
DRVH
LIN
DRVL
PGND
VO
VSNS
OVP_SL
12
14
Level
Shift
Latch
Buff
Logic
OSC
Buff
COMP
+
+
Synchronous
Cont.
(Logic)
UVLO
Gate Driver
OFF Clamp
PRE_REG
Vpreg
PWRGD
EN
EN
H : ON
L : OFF
POWER_GOOD
H : GOOD
L : NG
GND
Power
Good
Switching
Constant On
Time Cont.
Open : Change Frequency
Short : 400KHz Operation
+
+
+
OCP
SS
■Typical Connection Diagram
+
NC
R1
5m
R5
10
R6
10
R4
47k
C3
0.1 F
D1
SJPJ-L3
R3 : 20
R11 : 100k
R8 : 200k
C8 : 220pF
C4 : 3.3
Q2
F
VCC
EN
SKIP
C2 :
330 F
VO
VIN
Q1
R2
C9
1000
pF
R10
2.2k
PWRGD
VCC
R7
47k
R9
C6
0.1 ~ 1 F
D2 : SFPL52
L1 : 10 H
VCC : 5V
C1 : 10 F
µ
C5 : 4.7 F
µ
µ
µ
µ
C7 : 0.1 F
µ
µ
µ
SI-8011NVS
24
LIN
23
DRVL
22
PGND
21
VCC2
20
LOSDACT
19
VCC1
18
SS
17
EN
16
SKIP
15
FADJ
14
NC
13
NC
1
DRVH
2
VH
3
VIN
4
ISEN
5
ILIN
6
GND
7
VSNS
8
VO
9
PWRGD
10
REF
11
NC
12
MOS FET Q1, Q2
• Be sure to use logic type MOS FET as Q1 and Q2.
If you use a normal power MOS FET type, the ON resistance may not drop to a
satisfactory level due to a shortage of VGS. This may deteriorate the efficiency
and cause overheating.
Diode D1
•Be sure to use a Schottky-barrier diode for D1.
If other diodes like fast recovery diodes are used, IC may be destroyed because
of the reverse voltage generated by the recovery voltage or ON voltage.
Choke coil L1
• If the winding resistance of the choke coil is too high, the efficiency may drop
below the rated value.
•Take care concerning heat radiation from the choke coil caused by magnetic
saturation due to overload or short-circuit load.
Capacitor C1, C2
•As large ripple currents flow through C1 and C2, use high-frequency and low-
impedance capacitors aiming for switching-mode-power-supply use. Especially
when the impedance of C2 is high, the switching waveform may become abnor-
mal at low temperatures. For C2, do not use a capacitor with an extremely low
equivalent series resistance (ESR) such as a ceramic capacitor, which may cause
an abnormal oscillation.
* To create the optimum operating conditions, place the components as close as
possible to each other.


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