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TPC8027 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TPC8027 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC8027 2009-09-29 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 9 A ⎯ 3.5 5.5 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 9 A ⎯ 2.1 2.7 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 9 A 24 48 ⎯ S Input capacitance Ciss ⎯ 4200 ⎯ Reverse transfer capacitance Crss ⎯ 1000 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1400 ⎯ pF Rise time tr ⎯ 25 ⎯ Turn-ON time ton ⎯ 44 ⎯ Fall time tf ⎯ 46 ⎯ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 μs ⎯ 120 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 113 ⎯ Gate-source charge 1 Qgs1 ⎯ 13 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− 24 V, VGS = 10 V, ID = 18 A ⎯ 42 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 72 A Forward voltage (diode) VDSF IDR = 18 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ∼− 15 V 0 V VGS 10 V ID = 9 A VOUT |
类似零件编号 - TPC8027 |
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类似说明 - TPC8027 |
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