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TC7MBL3257CFT 数据表(PDF) 4 Page - Toshiba Semiconductor |
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TC7MBL3257CFT 数据表(HTML) 4 Page - Toshiba Semiconductor |
4 / 12 page TC7MBL3257CFT/FK/FTG 2008-07-17 4 Electrical Characteristics DC Characteristics (Ta = −40 to 85°C) Parameter Symbol Test Condition VCC (V) Min Typ. Max Unit “H” level VIH ⎯ 1.65 to 3.6 0.7 × VCC ⎯ ⎯ Input voltage ( OE , S) “L” level VIL ⎯ 1.65 to 3.6 ⎯ ⎯ 0.3 × VCC V Input leakage current ( OE , S) IIN VIN = 0 to 3.6 V 1.65 to 3.6 ⎯ ⎯ ±1.0 μA Power-off leakage current IOFF OE ,S, A,B = 0 to 3.6 V 0 ⎯ ⎯ 10 μA Off-state leakage current (switch off) ISZ A, B = 0 to VCC, OE = VCC 1.65 to 3.6 ⎯ ⎯ ±1.0 μA VIS = 0 V, IIS = 30 mA (Note1) 3.0 ⎯ 8.5 13 VIS = 3.0 V, IIS = 30 mA (Note1) 3.0 ⎯ 16 24 VIS = 2.4, IIS = 15 mA (Note1) 3.0 ⎯ 18 27 VIS = 0 V, IIS = 24 mA (Note1) 2.3 ⎯ 10 15 VIS = 2.3 V, IIS = 24 mA (Note1) 2.3 ⎯ 20 30 VIS = 2.0, IIS = 15 mA (Note1) 2.3 ⎯ 23 33 VIS = 0 V, IIS = 4 mA (Note1) 1.65 ⎯ 12 18 On resistance (Note2) RON VIS = 1.65 V, IIS = 4 mA (Note1) 1.65 ⎯ 26 37 Ω Quiescent supply current ICC VIN = VCC or GND, IOUT = 0 3.6 ⎯ ⎯ 10 μA Note1: All typical values are at Ta=25 °C. Note2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is determined by the lower of the voltages on the two (A or B) pins. |
类似零件编号 - TC7MBL3257CFT |
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类似说明 - TC7MBL3257CFT |
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