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ST3414 数据表(PDF) 1 Page - Stanson Technology |
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ST3414 数据表(HTML) 1 Page - Stanson Technology |
1 / 6 page ST3414 N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3414 2006. V1 DESCRIPTION ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Week Code ORDERING INFORMATION Part Number Package Part Marking ST3414S23RG SOT-23 14YA ※ Week Code : A ~ Z ; a ~ z ※ ST3414S23RG : S23 : SOT23-3L R : Tape Reel ; G : Pb – Free FEATURE 20V/4.2A, RDS(ON) = 40mΩ ( Typ.) @VGS = 4.5V 20V/3.4A, RDS(ON) = 55 mΩ @VGS = 2.5V 20V/2.8A, RDS(ON) = 75 mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 1 2 D G S 3 1 2 14YA |
类似零件编号 - ST3414 |
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类似说明 - ST3414 |
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