1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PNP Silicon Transistor

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

– 300

Vdc

Collector-Base Voltage

VCBO

–300

Vdc

Collector-Emitter Voltage

VCER

– 300

Vdc

Emitter-Base Voltage

VEBO

– 5.0

Vdc

Collector Current

IC

–100

mAdc

Total Power Dissipation up to

TA = 25°C(1)

PD

1.5

Watts

Storage Temperature Range

Tstg

– 65 to +150

°C

Junction Temperature

TJ

150

°C

DEVICE MARKING

DF

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance from Junction to

Ambient(1)

R

θJA

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC = –1.0 mAdc, IB = 0)

V(BR)CEO

– 300

—

Vdc

Collector-Base Breakdown Voltage

(IC = –100 µAdc, IE = 0)

V(BR)CBO

–300

—

Vdc

Collector-Emitter Breakdown Voltage

(IC = –100 µAdc, RBE = 2.7 kΩ)

V(BR)CER

–300

—

Vdc

Emitter-Base Breakdown Voltage

(IE = –10 µAdc, IC = 0)

V(BR)EBO

– 5.0

—

Vdc

Collector-Base Cutoff Current

(VCB = – 200 Vdc, IE = 0)

ICBO

—

–10

nAdc

Collector–Emitter Cutoff Current

(VCE = – 250 Vdc, RBE = 2.7 kΩ)

(VCE = – 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C)

ICER

—

—

–50

–10

nAdc

µAdc

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by BF721T1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1996

BF721T1

PNP SILICON

TRANSISTOR

SURFACE MOUNT

Motorola Preferred Device

CASE 318E-04, STYLE 1

SOT–223 (TO-261AA)

1

2

3

4

COLLECTOR 2,4

BASE

1

EMITTER 3

REV 3