BD241B datasheet(2/6 Pages) MOTOROLA

部件名	BD241B

功能描述	Complementary Silicon Plastic Power Transistors

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制造商	MOTOROLA [Motorola, Inc]

网页	http://www.freescale.com

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2 / 6 page

BD241B BD241C BD242B BD242C

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage1

(IC = 30 mAdc, IB = 0)

BD241B, BD242B

BD241C, BD242C

VCEO

80

100

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

BD241B, BD241C, BD242B, BD242C

ICEO

0.3

mAdc

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0)

BD241B, BD242B

(VCE = 100 Vdc, VEB = 0)

BD241C, BD242C

ICES

200

µAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

1.0

mAdc

ON CHARACTERISTICS1

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

25

10

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 600 Adc)

VCE(sat)

1.2

Vdc

Base–Emitter On Voltage

(IC = 3.0 Adc, VCE = 4.0 Vdc)

VBE(on)

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current Gain – Bandwidth Product2

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

fT

3.0

MHz

Small–Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

20

1 Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

2 fT = |hfe| • ftest.

2.0

0.03

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.1

0.07

0.02

0.05

0.1

0.3

0.5 0.7 1.0

3.0

td @ VBE(off) = 2.0 V

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

tr @ VCC = 10 V

0.07

0.03

0.05

Figure 2. Switching Time Equivalent Circuit

Figure 3. Turn–On Time

APPROX

+ 11 V

TURN-ON PULSE

Vin 0

t1

VEB(off)

APPROX – 9.0 V

TURN-OFF PULSE

Vin

t3

t2

APPROX

+ 11 V

VCC

SCOPE

RK

Cjd % Ceb

– 4.0 V

t1 v 7.0 ns

100

t t2 t 500 µs

t3 t 15 ns

DUTY CYCLE

[ 2.0%

Vin

RL

类似零件编号 - BD241B

制造商	部件名	数据表	功能描述
Mospec Semiconductor	BD241B	133Kb / 3P	POWER TRANSISTORS(3A,40W)
Inchange Semiconductor ...	BD241B	132Kb / 3P	Silicon NPN Power Transistors
ON Semiconductor	BD241B	108Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON
Comset Semiconductor	BD241B	104Kb / 3P	MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
Power Innovations Ltd	BD241B	87Kb / 6P	NPN SILICON POWER TRANSISTORS

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