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TPS1120 数据表(PDF) 3 Page - Texas Instruments |
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TPS1120 数据表(HTML) 3 Page - Texas Instruments |
3 / 12 page TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 absolute maximum ratings over operating free-air temperature (unless otherwise noted)† UNIT Drain-to-source voltage, VDS –15 V Gate-to-source voltage, VGS 2 or –15 V VGS =2 7 V TA = 25°C ±0.39 VGS = – 2.7 V TA = 125°C ±0.21 VGS =3 V TA = 25°C ±0.5 Continuous drain current each device (TJ = 150°C) ID VGS = – 3 V TA = 125°C ±0.25 A Continuous drain current, each device (TJ = 150°C), ID VGS =4 5 V TA = 25°C ±0.74 A VGS = – 4.5 V TA = 125°C ±0.34 VGS =10 V TA = 25°C ±1.17 VGS = – 10 V TA = 125°C ±0.53 Pulse drain current, ID TA = 25°C ±7 A Continuous source current (diode conduction), IS TA = 25°C –1 A Continuous total power dissipation See Dissipation Rating Table Storage temperature range, Tstg – 55 to 150 °C Operating junction temperature range, TJ – 40 to 150 °C Operating free-air temperature range, TA – 40 to 125 °C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR‡ ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D 840 mW 6.71 mW/ °C 538 mW 437 mW 169 mW ‡ Maximum values are calculated using a derating factor based on RθJA = 149°C/W for the package. These devices are mounted on an FR4 board with no special thermal considerations. |
类似零件编号 - TPS1120 |
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类似说明 - TPS1120 |
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