BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

BC846A, BC847A, BC848A

(IC = 10 µA, VCE = 5.0 V)

BC846B, BC847B, BC848B

BC847C, BC848C

(IC = 2.0 mA, VCE = 5.0 V)

BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC847C, BC848C

hFE

—

—

—

110

200

420

90

150

270

180

290

520

—

—

—

220

450

800

—

Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

VCE(sat)

—

—

—

—

0.25

0.6

V

Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

VBE(sat)

—

—

0.7

0.9

—

—

V

Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

VBE(on)

580

—

660

—

700

770

mV

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

—

—

MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz)

Cobo

—

—

4.5

pF

Noise Figure (IC = 0.2 mA,

BC846A, BC847A, BC848A

VCE = 5.0 Vdc, RS = 2.0 kΩ,

BC846B, BC847B, BC848B

f = 1.0 kHz, BW = 200 Hz)

BC847C, BC848C

NF

—

—

—

—

10

4.0

dB

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

0.2

0.5

1.0

10

20

50

0.2

100

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

2.0

5.0

200

0.6

0.7

0.8

0.9

1.0

0.5

0

0.2

0.4

0.1

0.3

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

1.5

1.0

0.8

0.6

0.4

0.3

0.2

0.5

1.0

10

20

50

2.0

100

70

30

7.0

5.0

3.0

0.7

0.3

0.1

0.2

1.0

10

100

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE = 10 V

TA = 25°C

–55

°C to +125°C

TA = 25°C

IC = 50 mA

IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0