BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC847/BC848

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10

Figure 6. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4

0.6

1.0

10

20

1.0

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

2.0

6.0

40

80

100

200

300

400

60

20

40

30

0.8

1.0

0.6

0.2

0.4

1.0

2.0

0.1

1.0

10

100

0.2

0.2

0.5

7.0

5.0

3.0

2.0

0.7

1.0

10

20

2.0

50

30

7.0

5.0

3.0

0.5

0.2

1.0

10

200

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

VCE = 10 V

TA = 25°C

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

–1.0

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

2.0

10

200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

0.8

4.0

8.0

TA = 25°C

Cob

Cib

VCE = 5 V

TA = 25°C

0

0.5

2.0

5.0

20

50

100

0.05

0.2

0.5

2.0

5.0

100 mA

20 mA

–1.4

–1.8

–2.2

–2.6

–3.0

0.5

5.0

20

50

100

–55

°C to 125°C

θVB for VBE