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Dated : 27/12/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BC368
NPN Silicon Epitaxial Planar Transistor
Applications
• General purpose switching and amplification
• Power applications such as audio output stages
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
32
V
Collector Emitter Voltage
VCEO
20
V
Emitter Base Voltage
VEBO
5
V
Collector Current (DC)
IC
1
A
Peak Collector Current
ICM
2
A
Total Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 10 V, IC = 5 mA
at VCE = 1 V, IC = 500 mA
at VCE = 1 V, IC = 1 A
hFE
hFE
hFE
50
85
60
-
375
-
-
-
-
Collector Base Cutoff Current
at VCB = 25 V
ICBO
-
100
nA
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
100
nA
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
32
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
20
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
5
-
V
Collector Emitter Saturation Voltage
at IC = 1 A, IB = 100 mA
VCE(sat)
-
0.5
V
Base Emitter On Voltage
at VCE = 1 V, IC = 1 A
VBE(on)
-
1
V
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 20 MHz
fT
40
-
MHz
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package