ST-2SB1386U datasheet(1/3 Pages) SEMTECH_ELEC

部件名	ST-2SB1386U

功能描述	PNP Silicon Epitaxial Planar Transistor

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制造商	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

网页	http://www.semtech.net.cn

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Dated : 26/11/2007

®

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

ST 2SB1386U

PNP Silicon Epitaxial Planar Transistor

Low frequency transistor

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector Base Voltage

-VCBO

30

V

Collector Emitter Voltage

-VCEO

20

V

Emitter Base Voltage

-VEBO

6

V

Collector Current - DC

Collector Current - Pulse

1)

-IC

-ICP

5

10

A

Collector Power Dissipation

PC

0.5

2

W

Junction Temperature

TJ

150

O

C

Storage Temperature Range

TS

- 55 to + 150

O

C

1) Single pulse, P

W = 10 ms.

2) When mounted on a 40 X 40 X 0.7 mm ceramic board.

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 2 V, -IC = 500 mA

Current Gain Group

P

Q

R

hFE

82

120

180

-

180

270

390

-

Collector Base Cutoff Current

at -VCB = 20 V

-ICBO

-

0.5

µA

Emitter Base Cutoff Current

at -VEB = 5 V

-IEBO

-

0.5

µA

Collector Base Breakdown Voltage

at -IC = 50 µA

-V(BR)CBO

30

-

V

Collector Emitter Breakdown Voltage

at -IC = 1 mA

-V(BR)CEO

20

-

V

Emitter Base Breakdown Voltage

at -IE = 50 µA

-V(BR)EBO

6

-

V

Collector Emitter Saturation Voltage

at -IC = 4 A, -IB = 100 mA

-VCE(sat)

-

1

V

Transition Frequency

at -VCE = 6 V, IE = 50 mA, f = 100 MHz

fT

-

120

-

MHz

Output Capacitance

at -VCB = 20 V, IE = 0, f = 1 MHz

Cob

-

60

-

pF

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