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Dated : 15/03/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST BC635 / BC637 / BC639
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 2 V, IC = 5 mA
at VCE = 2 V, IC = 150 mA
at VCE = 2 V, IC = 500 mA
BC635
BC637 / BC639
hFE
hFE
hFE
hFE
40
40
40
25
-
250
160
-
-
-
-
-
Collector Cutoff Current
at VCB = 30 V
ICBO
-
100
nA
Emitter Cutoff Current
at VEB = 5 V
IEBO
-
100
nA
Collector Base Breakdown Voltage
at IC = 100 µA
BC635
BC637
BC639
V(BR)CBO
45
60
100
-
-
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
BC635
BC637
BC639
V(BR)CEO
45
60
80
-
-
-
V
Emitter Base Breakdown Voltage
at IE = 10 µA
V(BR)EBO
5
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCE(sat)
-
0.5
V
Base Emitter Voltage
at VCE = 2 V, IC = 500 mA
VBE
-
1
V
Gain Bandwidth Product
at VCE = 5 V, IC = 50 mA, f = 100 MHz
fT
100
-
MHz