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Dated : 22/01/2008
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MMBD914
High Speed Switching Diode
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
100
V
Forward Current
IF
200
mA
Peak Forward Surge Current
IFSM
500
mA
Power Dissipation
Ptot
300
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 10 mA
VF
-
1
V
Reverse Breakdown Voltage
at IR = 100 µA
V(BR)R
100
-
V
Reverse Current
at VR = 20 V
at VR = 75 V
IR
-
-
25
5
nA
µA
Reverse Recovery Time
at IF = IR = 10 mA
trr
-
4
ns
Total Capacitance
at VR = 0 , f = 1 MHz
CT
-
4
pF
1
3
2
Marking Code: 5D
SOT-23 Plastic Package
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