1N4448W datasheet(1/3 Pages) SEMTECH_ELEC

部件名	1N4448W

功能描述	SILICON EPITAXIAL PLANAR DIODE

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制造商	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

网页	http://www.semtech.net.cn

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Dated : 07/04/2009

SEMTECH ELECTRONICS LTD.

(

Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

1N4448W

SILICON EPITAXIAL PLANAR DIODE

Fast Switching Diode

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

VRM

100

V

Reverse Voltage

VR

80

V

Average Rectified Output Current

IO

150

mA

Forward Continuous Current

IFM

300

mA

Non-Repetitive Peak Forward Surge Current (at t = 1 µs)

IFSM

0.5

A

Power Dissipation

Pd

400

mW

Junction Temperature

Tj

150

O

C

Storage Temperature Range

Tstg

- 65 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at IF = 5 mA

at IF = 10 mA

at IF = 100 mA

at IF = 150 mA

VF

0.62

-

0.72

0.855

1

1.25

V

Reverse Leakage Current

at VR = 80 V

at VR = 20 V

at VR = 75 V, TJ = 150 OC

at VR = 25 V, TJ = 150 OC

IR

-

100

25

50

30

nA

µA

Reverse Breakdown Voltage

at IR = 100 µA

V(BR)R

80

-

V

Capacitance

at VR = 0.5 V, f = 1 MHz

Ctot

-

4

pF

Reverse Recovery Time

at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω

trr

-

4

ns

Anode

2

Top View

Marking Code: "W1"

Simplified outline SOD-123 and symbol

1

2

PINNING

1

Cathode

DESCRIPTION

W1

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