ST28S datasheet(2/2 Pages) SEMTECH_ELEC

部件名	ST28S

功能描述	NPN Silicon Epitaxial Planar Transistor

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制造商	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

网页	http://www.semtech.net.cn

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2 / 2 page

Dated : 11/06/2004

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

ST 28S

Characteristics at Tamb=25

OC

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE=1V, IC=5mA

at VCE=1V, IC=100mA

at VCE=1V, IC=800mA

hFE

45

200

40

170

-

80

-

1000

-

Collector Base Breakdown Voltage

at IC=100μA

V(BR)CBO

40

-

V

Collector Emitter Breakdown Voltage

at IC=2mA

V(BR)CEO

20

-

V

Emitter Base Breakdown Voltage

at IE=100μA

V(BR)EBO

6

-

V

Collector Cutoff Current

at VCB=35V

ICBO

-

100

nA

Emitter Cutoff Current

at VBE=6V

IEBO

-

100

nA

Collector Saturation Voltage

at IC=600mA, IB=20mA

VCE(sat)

-

0.55

V

Base Saturation Voltage

at IC=600mA, IB=20mA

VBE(sat)

-

0.98

1.2

V

Base Emitter Voltage

at IC=10mA, VCE=1V

VBE

-

0.66

1.0

V

Gain Bandwidth Product

at VCE=10V, IC=50mA

fT

100

-

MHz

Collector Base Capacitance

at VCB=10V, f=1MHz

COB

-

9

pF

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