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BC817-25 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BC817-25 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual BC817-16 BC817-25 NPN Transistor BC817-40 on FEATURES Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View 1 2 3 COLLECTOR 3 1 BASE 2 EMITTER Power dissipati Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 30 V Operating and junction temperature range For general AF applications TJ, Tstg: -55 to +150 C o C o n n High collector current n High current gain n Low collector-emitter saturation voltage n ELECTRICAL CHARACTERISTICS (Tamb=25 C o unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1µA, IC=0 5 V Collector cut-off current ICBO VCB=45V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA hFE(1) VCE=1V, IC=100mA 100 600 DC current gain hFE(2) VCE=1V, IC=500mA 40 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.7 V Base-emitter voltage & saturation voltage V & BE VBE(sat) IC=500mA, IB=50mA VCE=1V, IC=500mA 1.2 V Transition frequency fT VCE=5V, IC=10mA, f=100MHz 100 MHz Collector output capacitance Cob VCB=10V, f=1MHz 10 pF CLASSIFICATION OF hFE(1) Rank BC817-16 BC817-25 BC817-40 Range 100-250 160-400 250-600 Marking 6A 6B 6C http://www.SeCoSGmbH.com Elektronische Bauelemente PCM: 300 mW (Tamb=25 ) C o n n n 01-Jun-200 7 Rev. C Page 1 of 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
类似零件编号 - BC817-25 |
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类似说明 - BC817-25 |
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