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BU2508DF 数据表(PDF) 2 Page - Savantic, Inc. |
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BU2508DF 数据表(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU2508DF CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V VEBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.12A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=1.7A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 227 mA hFE-1 DC current gain IC=1A ; VCE=5V 13 hFE-2 DC current gain IC=4.5A ; VCE=1V 4 5.5 7.0 VF Diode forward voltage IF=4.5A 1.6 2.0 V CC Collector capacitance IE=0; f=1MHz;VCB=10V 80 pF |
类似零件编号 - BU2508DF |
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类似说明 - BU2508DF |
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