2SD2060 datasheet(2/4 Pages) SAVANTIC

部件名	2SD2060

功能描述	Silicon NPN Power Transistors

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制造商	SAVANTIC [Savantic, Inc.]

网页	http://www.svntc.com

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2 / 4 page

SavantIC Semiconductor

Product Specification

2

Silicon NPN Power Transistors

2SD2060

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=50mA ;IB=0

80

V

V(BR)EBO

Emitter-base breakdown voltage

IE=10mA ;IC=0

5

V

VCEsat

Collector-emitter saturation voltage

IC=3A ;IB=0.3A

0.45

1.5

V

VBE

Base-emitter on voltage

IC=3A;VCE=5V

1.0

1.5

V

ICBO

Collector cut-off current

VCB=80V; IE=0

30

µA

IEBO

Emitter cut-off current

VEB=5V; IC=0

100

µA

hFE-1

DC current gain

IC=0.5A ; VCE=5V

40

240

hFE-2

DC current gain

IC=3A ; VCE=5V

15

50

fT

Transition frequency

IC=0.5A ; VCE=5V

8.0

MHz

COB

Collector output capacitance

f=1MHz;VCB=10V

90

pF

hFE-1 Classifications

R

O

Y

40-80

70-140

120-240

类似零件编号 - 2SD2060

制造商	部件名	数据表	功能描述
Quanzhou Jinmei Electro...	2SD2060	51Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SD2060	193Kb / 4P	Silicon NPN Power Transistors
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Quanzhou Jinmei Electro...	2SD2060	51Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SD2060_2015	51Kb / 3P	Silicon NPN Power Transistors

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类似说明 - 2SD2060

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