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TSAL7200 数据表(PDF) 1 Page - Vishay Siliconix

部件名 TSAL7200
功能描述  GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

TSAL7200 数据表(HTML) 1 Page - Vishay Siliconix

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TSAL7200
Vishay Telefunken
1 (5)
Rev. 1, 20-May-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81012
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1
¾)
Package
Description
TSAL7200 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in a clear plas-
tic package.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
D Extra high radiant power and radiant intensity
D High reliability
D Low forward voltage
D Suitable for high pulse current operation
D Standard T–1¾ (ø 5 mm) package
D Angle of half intensity ϕ = ± 17°
D Peak wavelength lp = 940 nm
D Good spectral matching to Si photodetectors
94 8389
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
VR
5
V
Forward Current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 ms
IFM
200
mA
Surge Forward Current
tp = 100 ms
IFSM
1.5
A
Power Dissipation
PV
210
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
–55...+100
°C
Storage Temperature Range
Tstg
–55...+100
°C
Soldering Temperature
t
x 5sec, 2 mm from case
Tsd
260
°C
Thermal Resistance Junction/Ambient
RthJA
350
K/W


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