IRF630 datasheet(4/4 Pages) A-POWER

部件名	IRF630

功能描述	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download	4 Pages

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制造商	A-POWER [Advanced Power Electronics Corp.]

网页	http://www.a-power.com.tw

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4 / 4 page

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

4/4

IRF630

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

1

10

100

1

10

100

1000

V DS , Drain-to-Source Voltage (V)

T c =25

o C

Single Pulse

1s

100us

1ms

10ms

100m

0

2

4

6

8

10

12

010

20

30

Q G , Total Gate Charge (nC)

I D =5.9A

V DS =40V

V DS =100V

V DS =160V

10

1000

1

5

9

13

17

21

25

29

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

td(on) tr

td(off) tf

VDS

VGS

10%

90%

Q

VG

10V

QGS

QGD

QG

Charge

DC

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