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MJ1001 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ1001 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 40mA B 4.0 V VBE(on) Base-Emitter On Voltage IC= 3A, VCE= 3V 2.5 V ICER Collector Cutoff Current VCE= 80V; RBE=1kΩ VCE= 80V; RBE=1kΩ; TC=150℃ 1.0 5.0 mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 B 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 3A, VCE= 3V 1000 hFE-2 DC Current Gain IC= 4A, VCE= 3V 750 isc Website:www.iscsemi.cn |
类似零件编号 - MJ1001 |
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类似说明 - MJ1001 |
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