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BD201 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 BD201
功能描述  isc Silicon NPN Power Transistor
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BD201 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD201/203
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)- BD201
60V(Min)- BD203
·Complement to Type BD202/204
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD201
60
VCBO
Collector-Base Voltage
BD203
60
V
BD201
45
VCEO
Collector-Emitter Voltage
BD203
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
tp≤10ms
12
A
ICSM
Collector Current-Peak
tp≤2ms
25
A
IB
B
Base Current
3
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.08
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
70
℃/W
isc Website：www.iscsemi.cn


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