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BU209 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU209 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU209 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CES Collector-Emitter Breakdown Voltage IC= 1mA 1700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.3A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1.3A B 1.5 V hFE DC Current Gain IC= 3A ; VCE= 5V 2.25 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1MHz 125 pF fT Current-Gain—Bandwidth Product IC= 0.1A;VCE= 5V;ftest= 5MHz 7 MHz Switching Times ts Storage Time 10 μs tf Fall Time IC= 3A; IB= 1.8A;L B B= 10μH 0.7 μs isc Website:www.iscsemi.cn 2 |
类似零件编号 - BU209 |
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类似说明 - BU209 |
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