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KDS8928A 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 KDS8928A
功能描述  Dual N & P-Channel Enhancement Mode Field Effect Transistor
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

KDS8928A 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  KDS8928A Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd KDS8928A Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd KDS8928A Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd  
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2
SMD Type
IC
SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
VGS =0V, ID = 250
A
N-Ch
30
VGS =0V, ID = -250
A
P-Ch
-20
ID = 250
A, Referenced to 25
N-Ch
32
ID = -250
A, Referenced to 25
P-Ch
-23
VDS = 24V, VGS =0V
N-Ch
1
VDS =-16 V, VGS =0V
P-Ch
-1
VGS =
8V, VDS =0V
N-Ch
100
VGS =
8V, VDS =0V
P-Ch
100
VDS =VGS,ID = 250
A
N-Ch
0.4
0.67
VDS =VGS,ID = -250
A
P-Ch
-0.4
-0.6
ID = 250
A, Referenced to 25
N-Ch
-3
ID = -250
A, Referenced to 25
P-Ch
4
VGS =4.5 V, ID =5.5A
0.025
0.03
VGS =2.5 V, ID = 4.5A
0.031 0.038
VGS =-4.5V, ID =-4 A
0.043 0.055
VGS =-2.5V, ID =-3.4 A
.059
0.072
VGS =4.5 V, VDS =5V
N-Ch
20
VGS =-4.5V, VDS =-5V
P-Ch
-20
VDS =5V, ID =5.5A
N-Ch
20
VDS =-5V, ID = -4A
P-Ch
13
N-Channel
N-Ch
900
VDS =10V, VGS = 0 V,f = 1.0 MHz
P-Ch
1130
N-Ch
410
P-Channel
P-Ch
480
VDS =-10 V, VGS = 0 V,f = 1.0 MHz
N-Ch
110
P-Ch
120
N-Channel
N-Ch
6
12
VDD =6V, ID = 1 A,
P-Ch
8
16
VGS =4.5 V, RGEN =6
(Note 2)
N-Ch
19
31
P-Ch
23
37
P-Channel
N-Ch
42
67
VDD =-10 V, ID = -1 A,
P-Ch
260
360
VGS =-4.5V, RGEN =6
(Note 2)
N-Ch
13
24
P-Ch
90
125
N-Channel
N-Ch
19.8
28
VDS =10V,ID=5.5A,VGS=4.5V(Note 2)
P-Ch
20
28
N-Ch
2
P-Channel
P-Ch
2.8
VDS=-5V,ID=-4A,VGS=-5V(Note 2)
N-Ch
6.3
P-Ch
3.2
nC
Testconditons
ns
ns
nC
nC
pF
pF
ns
ns
A
S
pF
P-Ch
V
mV/
A
nA
V
mV/
m
Qgd
Gate-Drain Charge
Qg
Total Gate Charge
Gate-Source Charge
Qgs
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gFS
Forward Transconductance
Gate Threshold Voltage Temperature
Coefficient
RDS(on)
Static Drain-Source On-Resistance
ID(on)
On-State Drain Current
RDS(on)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
N-Ch
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Gate-Body Leakage
IGSS
IDSS
Zero Gate Voltage Drain Current
KDS8928A


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