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2SC4390 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC4390 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type Transistors 1 www.kexin.com.cn NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 15 V Collector current IC 2A Collector current (pulse) ICP 4A Base current IB 0.4 A Collector dissipation PC 500 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 |
类似零件编号 - 2SC4390 |
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类似说明 - 2SC4390 |
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