2SA1226 datasheet(1/1 Pages) KEXIN

部件名	2SA1226

功能描述	Silicon Transistor

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1 / 1 page

SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

Silicon Transistor

2SA1226

Features

High gain bandwidth product

Low output capacitance

Low noise

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage (RBE =

)

VCBO

-40

V

Collector-emitter voltage

VCEO

-40

V

Emitter-base voltage

VEBO

-5.0

V

Collector current - continuous

IC

-30

mA

Total power dissipation at 25

ambient temperature

PT

200

mW

Jumction temperature

Tj

150

Storage temperature

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB =-40V , IE =0

-0.1

ìA

Emitter cutoff current

IEBO

VEB = -4.0V , IC =0

-0.1

ìA

DC current gain

hFE

VCE =-10V , IC = -1.0mA

40

90

180

Collector-emitter saturation voltage

VCE(sat) IC =-10mA , IB = -1.0mA

-0.09

-0.3

V

Base-emitter vVoltage

VBE

VCE =-10V, IC = -10mA

-0.67

-0.72

V

Gain bandwidth product

fT

VCE =-10V , IE =1.0mA

250

400

MHz

Output capacitance

Cob

VCB =-10V , IE = 0 , f = 1.0MHz

1.1

2.0

pF

Noise figure

NF

VCE =-10V, IC = -1.0mA, RG = 500Ù, f

=1.0MHz

3.5

dB

hFE Classification

Marking

E2

E3

E4

hFE

40

80

60

120

90

180

类似零件编号 - 2SA1226

制造商	部件名	数据表	功能描述
NEC	2SA1226	183Kb / 4P	HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

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类似说明 - 2SA1226

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